GaN Transistors(GaN HEMT)
The Results of GaN Transistors(GaN HEMT)1
Manufacturer
  • PN Junction Semiconductor
Package
  • DFN8080-8
Gain Bandwidth Product(GBP)
  • -55℃~+150℃
Trip Current
  • 55.5W
Drain Source On-State Resistance(8V)
  • 650V
Continuous Drain Current
  • 1 N-Channel
Gate Threshold Voltageu200b
  • 10A
Results:1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Continuous Drain Current
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Continuous Drain Current
1+
$9.8859
200+
$3.9444
500+
$3.8125
1000+
$3.7474
Min: 1
Mult: 1
12896
In Stock
P1H06300D8PN Junction Semiconductor
DFN8080-8 GaN Transistors(GaN HEMT) ROHS
E85840753DFN8080-8Tape & Reel (TR)
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