GaN Transistors(GaN HEMT)
The Results of GaN Transistors(GaN HEMT)1
Manufacturer
- PN Junction Semiconductor
Package
- DFN8080-8
Gain Bandwidth Product(GBP)
- -55℃~+150℃
Trip Current
- 55.5W
Drain Source On-State Resistance(8V)
- 650V
Continuous Drain Current
- 1 N-Channel
Gate Threshold Voltageu200b
- 10A
Results:1
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Continuous Drain Current |
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Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Continuous Drain Current |
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1+ $9.8859 200+ $3.9444 500+ $3.8125 1000+ $3.7474 | Min: 1 Mult: 1 | 12896 In Stock | P1H06300D8 | PN Junction Semiconductor | DFN8080-8 GaN Transistors(GaN HEMT) ROHS | E85840753 | DFN8080-8 | Tape & Reel (TR) | - |