ebee
Upload a BOM

IGBT Transistors / Modules
The Results of IGBT Transistors / Modules1
Manufacturer
  • Jilin Sino-Microelectronics
Package
  • TO-220MF
Gain Bandwidth Product(GBP)
  • -55℃~+150℃@(Tj)
Rated Voltage
  • -
Collector Emitter Voltage
  • 30A
Gate Threshold Voltage (Vgs(th)@Id)
  • 31W
Turn?on Delay Time (Td(on))
  • -
Collector-Emitter Breakdown Voltage (Vces)
  • -
Input Capacitance (Cies@Vce)
  • 650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
  • 880pF@25V
Total Gate Charge (Qg@Ic,Vge)
  • 6.5V@250uA
Diode Reverse Recovery Time (Trr)
  • -
Turn?off Switching Loss (Eoff)
  • -
Turn?on Switching Loss (Eon)
  • -
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
  • -
Diode Forward Voltage (Vf@If)
  • 1.6V@15A,15V
Chip
  • 1.4V@15A
Results:1
20/page
  • 1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Turn?on Delay Time (Td(on))
Collector-Emitter Breakdown Voltage (Vces)
Input Capacitance (Cies@Vce)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Total Gate Charge (Qg@Ic,Vge)
Diode Reverse Recovery Time (Trr)
Turn?off Switching Loss (Eoff)
Turn?on Switching Loss (Eon)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Diode Forward Voltage (Vf@If)
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Turn?on Delay Time (Td(on))
Collector-Emitter Breakdown Voltage (Vces)
Input Capacitance (Cies@Vce)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Total Gate Charge (Qg@Ic,Vge)
Diode Reverse Recovery Time (Trr)
Turn?off Switching Loss (Eoff)
Turn?on Switching Loss (Eon)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Diode Forward Voltage (Vf@If)
1+
$0.7175
10+
$0.5956
30+
$0.5339
100+
$0.4737
Min: 1
Mult: 1
57291
In Stock
JT015N065FEDJilin Sino-Microelectronics
31W 30A 650V TO-220MF IGBT Transistors / Modules ROHS
E82693274TO-220MFTube-packed
-
-
-
-
-
-
-
-
-
-
20/page
  • 1