IGBT Transistors / Modules
The Results of IGBT Transistors / Modules1
Manufacturer
  • FUXINSEMI
Package
  • TO-247-3
Gain Bandwidth Product(GBP)
  • -40℃~+175℃
Rated Voltage
  • -
Collector Emitter Voltage
  • 40A
Gate Threshold Voltage (Vgs(th)@Id)
  • 333W
Turn?on Delay Time (Td(on))
  • 204ns
Collector-Emitter Breakdown Voltage (Vces)
  • -
Input Capacitance (Cies@Vce)
  • 1.35kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
  • 1.781nF@25V
Total Gate Charge (Qg@Ic,Vge)
  • 4.8V@1mA
Diode Reverse Recovery Time (Trr)
  • 175nC@20A,15V
Turn?off Switching Loss (Eoff)
  • -
Turn?on Switching Loss (Eon)
  • -
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
  • 1.02mJ
Diode Forward Voltage (Vf@If)
  • 1.85V@20A,15V
Chip
  • 1.5V@20A
Results:1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Turn?on Delay Time (Td(on))
Collector-Emitter Breakdown Voltage (Vces)
Input Capacitance (Cies@Vce)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Total Gate Charge (Qg@Ic,Vge)
Diode Reverse Recovery Time (Trr)
Turn?off Switching Loss (Eoff)
Turn?on Switching Loss (Eon)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Diode Forward Voltage (Vf@If)
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Turn?on Delay Time (Td(on))
Collector-Emitter Breakdown Voltage (Vces)
Input Capacitance (Cies@Vce)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
Total Gate Charge (Qg@Ic,Vge)
Diode Reverse Recovery Time (Trr)
Turn?off Switching Loss (Eoff)
Turn?on Switching Loss (Eon)
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
Diode Forward Voltage (Vf@If)
1+
$1.6229
10+
$1.2791
30+
$1.0914
90+
$0.8785
Min: 1
Mult: 1
90279
In Stock
IHW20N135R5FFUXINSEMI
333W 40A 1.35kV TO-247-3 IGBT Transistors / Modules ROHS
E87467022TO-247-3Tube-packed
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