Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)92
Manufacturer
- Infineon Technologies
Package
- TO-247-3-41
- TO-247-3
- AG-HYBRIDD-2
- AG-EASY1B-2
- TO-247-4
- -
- TO-263-7
- AG-EASY2BM-2
- AG-EASY2B
- AG-62mm
- AG-EASY1B
- TO-263-7-13
- TO-263-7-12
- TO-247-4-1
- TO-263-8
Gain Bandwidth Product(GBP)
- -55℃~+150℃
- -55℃~+175℃
Trip Current
- 75W
- 150W
- 125W
- 96W
- 176W
- 136W
- 227W
- 85W
- 197W
- 68W
- 161W
- 126W
- 65W
- 110W
- 140W
- 375W
- 234W
- 211W
- 107W
- 115W
- 228W
- 60W
- 300W
- 88W
- 183W
- 181W
- 133W
- 104W
Drain Source On-State Resistance
- 63nC
- 5nC
- 33nC
Gate Threshold Voltageu200b
- 17A
- 50A
- 36A
- 35A
- 25A
- 13A
- 46A
- 30A
- 56A
- 39A
- 100A
- 55A
- 200A
- 47A
- 15A
- 54A
- 20A
- 53A
- 150A
- 58A
- 28A
- 500A
- 45A
- 24A
- 33A
- 98A
- 85A
- 63A
- 250A
- 6A
- 400A
- 5.2A
- 18A
- 375A
- 52A
- 4.7A
- 26A
- 7.4A
Input Capacitance
- 13pF
- 0.7pF
Output Capacitance
- 2120pF
- 275pF
- 1118pF
Segment Drive Current
- -
- Three-Phase Bridge
- Half Bridge
Supply Voltage (VCCB)
- 1 N-Channel
- 4 N-channel
- 2 N-Channel
- 6 N-Channel
Drain-Source On-State Resistance(18V)
- -
- 42mΩ
- 809mΩ
Drain-Source On-State Resistance(20V)
- -
- 30mΩ
- 48mΩ
Vgs(th)
- -
Encapsulated Type
- 4.5V
V(BR)DSS
- Single Tube
Drain-Source On-State Resistance(10V)
- 1200V
- 1700V
- 650V
Drain Source Voltage
- -
Drain Source Threshold Voltage
- 650V
- 1200V
- 1700V
- 2000V
With Lamp
- 4.5V
Results:92
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Vgs(th) | Encapsulated Type | V(BR)DSS | Drain-Source On-State Resistance(10V) | Drain Source Voltage |
|---|
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Vgs(th) | Encapsulated Type | V(BR)DSS | Drain-Source On-State Resistance(10V) | Drain Source Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $11.2539 10+ $9.8201 30+ $8.9446 100+ $8.2106 | Min: 1 Mult: 1 | 21884 In Stock | IMW65R039M1HXKSA1 | Infineon Technologies | TO-247-3-41 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83278949 | TO-247-3-41 | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $13.4780 10+ $12.4063 30+ $11.5041 90+ $10.7178 | Min: 1 Mult: 1 | 35158 In Stock | IMW120R030M1H | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E8536280 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $2426.2259 200+ $938.9184 500+ $905.9204 1000+ $889.6174 | Min: 1 Mult: 1 | 61927 In Stock | FS05MR12A6MA1BBPSA1 | Infineon Technologies | AG-HYBRIDD-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83277329 | AG-HYBRIDD-2 | Tray | - | - | - | - | - | - | - | - | ||
1+ $82.7512 200+ $32.0244 500+ $30.8996 1000+ $30.3426 | Min: 1 Mult: 1 | 83543 In Stock | F445MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83277325 | AG-EASY1B-2 | Tray | - | - | - | - | - | - | - | - | ||
1+ $51.0748 210+ $20.3788 510+ $19.6979 990+ $19.3614 | Min: 1 Mult: 1 | 19800 In Stock | IMZA120R014M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E87288888 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $259.0419 195+ $243.2916 495+ $235.1616 1005+ $231.1443 | Min: 1 Mult: 1 | 72881 In Stock | FS13MR12W2M1HB70BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E817201668 | - | Tray | - | - | - | - | - | - | - | - | ||
1+ $152.4005 192+ $60.8094 504+ $58.7777 1008+ $57.7730 | Min: 1 Mult: 1 | 5382 In Stock | FS55MR12W1M1HB11NPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E817644060 | - | Tray | - | - | - | - | - | - | - | - | ||
1+ $214.8178 192+ $85.7135 504+ $82.8501 1008+ $81.4342 | Min: 1 Mult: 1 | 77349 In Stock | DF11MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E820190884 | - | Tray | - | - | - | - | - | - | - | - | ||
1+ $170.9333 192+ $68.2045 504+ $65.9252 1008+ $64.7982 | Min: 1 Mult: 1 | 16814 In Stock | DF16MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E820190886 | - | Tray | - | - | - | - | - | - | - | - | ||
1+ $258.6657 192+ $103.2098 504+ $99.7607 1008+ $98.0576 | Min: 1 Mult: 1 | 46348 In Stock | DF8MR12W1M1HFB67BPSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E820190888 | - | Tray | - | - | - | - | - | - | - | - | ||
1+ $6.3324 200+ $2.4503 500+ $2.3654 1000+ $2.3222 | Min: 1 Mult: 1 | 50472 In Stock | IMBG65R163M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83283198 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | ||
1+ $12.0028 10+ $11.6183 | Min: 1 Mult: 1 | 31422 In Stock | IMZA65R030M1HXKSA1 | Infineon Technologies | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83289092 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $408.6330 200+ $158.1361 500+ $152.5784 1000+ $149.8319 | Min: 1 Mult: 1 | 6251 In Stock | FF6MR12W2M1B11 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83288032 | AG-EASY2BM-2 | Tray | - | - | - | - | - | - | - | - | ||
1+ $129.1715 200+ $49.9877 500+ $48.2318 1000+ $47.3631 | Min: 1 Mult: 1 | 6696 In Stock | F423MR12W1M1B76BPSA1 | Infineon Technologies | AG-EASY1B-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83277326 | AG-EASY1B-2 | Tray | - | - | - | - | - | - | - | - | ||
1+ $446.6518 200+ $172.8484 500+ $166.7752 1000+ $163.7726 | Min: 1 Mult: 1 | 64848 In Stock | FF6MR12W2M1B70BPSA1 | Infineon Technologies | AG-EASY2B Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83277327 | AG-EASY2B | Tray | - | - | - | - | - | - | - | - | ||
1+ $11.8130 200+ $4.5719 500+ $4.4114 1000+ $4.3312 | Min: 1 Mult: 1 | 35581 In Stock | IMBG65R057M1HXTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83282613 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | ||
1+ $19.1773 210+ $7.6522 510+ $7.3967 990+ $7.2713 | Min: 1 Mult: 1 | 75449 In Stock | IMW120R040M1HXKSA1 | Infineon Technologies | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E86061982 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $18.0170 200+ $7.1887 500+ $6.9491 1000+ $6.8300 | Min: 1 Mult: 1 | 90659 In Stock | AIMBG120R080M1XTMA1 | Infineon Technologies | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E87072054 | TO-263-7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | ||
1+ $71.0187 240+ $28.3370 480+ $27.3907 960+ $26.9231 | Min: 1 Mult: 1 | 5233 In Stock | IMYH200R050M1HXKSA1 | Infineon Technologies | Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E820191546 | - | Tube-packed | - | - | - | - | - | - | - | - | ||
1+ $313.5844 200+ $121.3532 500+ $117.0885 1000+ $114.9808 | Min: 1 Mult: 1 | 21052 In Stock | FF8MR12W2M1B11 | Infineon Technologies | AG-EASY2BM-2 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E83277328 | AG-EASY2BM-2 | Tray | - | - | - | - | - | - | - | - |