Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)3
Manufacturer
- KNSCHA
Package
- TO-247-3
- TO-247-4
Gain Bandwidth Product(GBP)
- -55℃~+150℃
Trip Current
- 62W
Drain Source On-State Resistance
- 23nC
Gate Threshold Voltageu200b
- 7A
- 58A
- 38A
Input Capacitance
- 1.8pF
Output Capacitance
- 194pF
Segment Drive Current
- -
Supply Voltage (VCCB)
- 1 N-Channel
Drain-Source On-State Resistance(18V)
- -
Drain-Source On-State Resistance(20V)
- -
Vgs(th)
- 650mΩ
V(BR)DSS
- Single Tube
Drain Source Voltage
- -
Drain Source Threshold Voltage
- 1200V
- 1700V
With Lamp
- 2.6V
Results:3
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Drain Source Voltage | Drain Source Threshold Voltage |
|---|
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Drain Source Voltage | Drain Source Threshold Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $2.3950 10+ $2.2023 30+ $2.0817 90+ $1.9580 | Min: 1 Mult: 1 | - In Stock | KN3M65017D | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E87432998 | TO-247-3 | Tube-packed | - | - | - | - | - | |||
1+ $10.2364 10+ $9.0287 30+ $8.2922 90+ $7.6750 | Min: 1 Mult: 1 | - In Stock | KN3M50120K | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85373189 | TO-247-4 | Tube-packed | - | - | - | - | - | |||
1+ $5.9631 10+ $5.2596 30+ $4.8308 90+ $4.4712 | Min: 1 Mult: 1 | - In Stock | KN3M80120K | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85373190 | TO-247-4 | Tube-packed | - | - | - | - | - |