Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)6
Manufacturer
- AnBon
Package
- TO-247-3
- TO-247-4
Gain Bandwidth Product(GBP)
- -55℃~175℃
Trip Current
- 500W
- 370W
Drain Source On-State Resistance
- 133nC
Gate Threshold Voltageu200b
- 65A
- 88A
Input Capacitance
- 7.8pF
Output Capacitance
- 3290pF
Capacityrange
- 124pF
Segment Drive Current
- -
Supply Voltage (VCCB)
- 1 N-Channel
Drain-Source On-State Resistance(18V)
- -
Drain-Source On-State Resistance(20V)
- 28mΩ
Vgs(th)
- 25mΩ
Encapsulated Type
- 3V
V(BR)DSS
- -
Drain-Source On-State Resistance(10V)
- 1200V
Drain Source Voltage
- -
Drain Source Threshold Voltage
- 1200V
Results:6
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Output Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Vgs(th) | Encapsulated Type | V(BR)DSS | Drain-Source On-State Resistance(10V) | Drain Source Voltage |
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Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Output Capacitance | Drain-Source On-State Resistance(18V) | Drain-Source On-State Resistance(20V) | Vgs(th) | Encapsulated Type | V(BR)DSS | Drain-Source On-State Resistance(10V) | Drain Source Voltage |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $4.0334 210+ $1.6096 510+ $1.5560 990+ $1.5291 | Min: 1 Mult: 1 | - In Stock | AS1M080120P | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E86506979 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | |||
1+ $14.5028 210+ $5.7872 510+ $5.5935 990+ $5.4983 | Min: 1 Mult: 1 | - In Stock | AS1M025120T | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85569900 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | |||
1+ $7.8951 210+ $3.1508 510+ $3.0460 990+ $2.9936 | Min: 1 Mult: 1 | - In Stock | AS1M040120T | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E86747015 | TO-247-4 | Tube-packed | - | - | - | - | - | - | - | - | - | |||
1+ $12.8791 10+ $10.9312 30+ $10.0266 90+ $9.2669 | Min: 1 Mult: 1 | - In Stock | ASXM028120P | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E829118251 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | |||
1+ $13.2243 10+ $12.6979 30+ $11.7838 90+ $10.9879 | Min: 1 Mult: 1 | - In Stock | AS2M040120P | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E819762685 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - | |||
1+ $14.4949 210+ $5.7840 510+ $5.5904 990+ $5.4951 | Min: 1 Mult: 1 | - In Stock | AS1M025120P | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E87217740 | TO-247-3 | Tube-packed | - | - | - | - | - | - | - | - | - |