Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)3
Manufacturer
- REASUNOS
Package
- TO-247-3
- TO-247-4
Gain Bandwidth Product(GBP)
- -40℃~+150℃
- -40℃~+175℃
Trip Current
- 69W
- 340W
- 166W
Drain Source On-State Resistance
- 21.8nC
- 121nC
- 79nC
Gate Threshold Voltageu200b
- 36A
- 5A
- 68A
Input Capacitance
- 1.6pF
- 11pF
Output Capacitance
- 186pF
- 2070pF
- 1475pF
Supply Voltage (VCCB)
- 1 N-Channel
Drain-Source On-State Resistance(20V)
- 40mΩ
Vgs(th)
- 80mΩ
- 1000mΩ
Drain Source Threshold Voltage
- 1200V
- 1700V
With Lamp
- 3V
- 2.6V
- 2.4V
Results:3
Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(20V) | Drain Source Threshold Voltage |
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Images | Pricing | Quantity | Availability | Mfr.Part # | Manufacturer | Description | RoHS | eBee Part# | Package | Packaging | Input Capacitance | Drain-Source On-State Resistance(20V) | Drain Source Threshold Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $2.3353 10+ $2.0574 30+ $1.8846 90+ $1.7056 | Min: 1 Mult: 1 | - In Stock | RSM1701K0W | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85371984 | TO-247-3 | Tube-packed | - | - | - | |||
1+ $6.4453 10+ $5.7197 30+ $5.2784 90+ $4.9078 | Min: 1 Mult: 1 | - In Stock | RSM120040W | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85371982 | TO-247-3 | Tube-packed | - | - | - | |||
1+ $5.1010 10+ $4.5701 30+ $4.2450 90+ $3.9734 | Min: 1 Mult: 1 | - In Stock | RSM120080Z | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | E85371983 | TO-247-4 | Tube-packed | - | - | - |