Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)2
Manufacturer
  • Slkor(SLKORMICRO Elec.)
Package
  • TO-247-3
Gain Bandwidth Product(GBP)
  • -55℃~+175℃@(Tj)
Trip Current
  • 134W
Drain Source On-State Resistance
  • 43nC
Gate Threshold Voltageu200b
  • 19A
Input Capacitance
  • 2pF
Output Capacitance
  • 895pF
Supply Voltage (VCCB)
  • 1 N-Channel
Vgs(th)
  • 160mΩ
Encapsulated Type
  • 2.9V
Drain-Source On-State Resistance(10V)
  • 1200V
Results:2
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Input Capacitance
Vgs(th)
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Input Capacitance
Vgs(th)
1+
$6.4735
10+
$5.4166
30+
$4.9188
90+
$4.5026
Min: 1
Mult: 1
-
In Stock
SL42N120A
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E82760945TO-247-3Tube-packed
-
-
1+
$5.5658
10+
$4.9329
30+
$4.1178
90+
$3.7927
Min: 1
Mult: 1
-
In Stock
SL19N120A
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E82760944TO-247-3Tube-packed
-
-