Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET)2
Manufacturer
  • Bruckewell
Package
  • TO-247-4
  • TO-263-7
Trip Current
  • 188W
Drain Source On-State Resistance
  • 61nC
Gate Threshold Voltageu200b
  • 35A
Segment Drive Current
  • -
Supply Voltage (VCCB)
  • 1 N-Channel
Drain-Source On-State Resistance(18V)
  • -
Drain-Source On-State Resistance(20V)
  • -
Vgs(th)
  • 77mΩ
V(BR)DSS
  • -
Drain Source Voltage
  • -
Drain Source Threshold Voltage
  • 1200V
With Lamp
  • 4V
Results:2
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Drain-Source On-State Resistance(18V)
Drain-Source On-State Resistance(20V)
Drain Source Voltage
Drain Source Threshold Voltage
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Drain-Source On-State Resistance(18V)
Drain-Source On-State Resistance(20V)
Drain Source Voltage
Drain Source Threshold Voltage
1+
$15.4385
10+
$14.8302
30+
$13.7790
90+
$12.8602
Min: 1
Mult: 1
22120
In Stock
CMS120N080WKBruckewell
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E829781282TO-247-4Tube-packed
-
-
-
-
1+
$18.8427
10+
$18.1020
30+
$16.8175
100+
$15.6970
Min: 1
Mult: 1
2358
In Stock
CMS120N080BBruckewell
TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E829781281TO-263-7Tape & Reel (TR)
-
-
-
-